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I think lithography costs are an appropriate concern. I cannot see a reason they will come down. [[User:Guiding light|Guiding light]] 05:28, 12 January 2006 (UTC)
I think lithography costs are an appropriate concern. I cannot see a reason they will come down. [[User:Guiding light|Guiding light]] 05:28, 12 January 2006 (UTC)


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==Accessibility==
==Accessibility==
Saw the note on the article being "too technical". Began work on trying to generalize the content a bit. [[User:Guiding light|Guiding light]] 07:42, 13 July 2006 (UTC)
Saw the note on the article being "too technical". Began work on trying to generalize the content a bit. [[User:Guiding light|Guiding light]] 07:42, 13 July 2006 (UTC)

I have finished a first round of revision. I hope the content is satisfactory. If anyone wants their content reinstated, please place notice here.[[User:Guiding light|Guiding light]] 09:04, 13 July 2006 (UTC)

I removed the technical and citation headers since I actually found them distracting. [[User:220.136.224.42|220.136.224.42]] 14:15, 13 July 2006 (UTC)

==Explanations in article==
The immersion lithography article is very technical, but based on other sources, it seems unavoidable to use technical terms such as refractive index, numerical aperture (N.A.), photoresist, etc. To keep it simple, I reduced some sections. Further work may still be needed regarding various immersion-specific issues (defects, polarization, high-index, photomask).[[User:61.61.254.9|61.61.254.9]] 00:30, 11 January 2007 (UTC)

Immersion lithography as of 2007 is in a pretty mature state. It is definitely going to use water as the medium and defect issues are being controlled to the point that immersion tools are big business for ASML and Nikon. While not directly related, double patterning has come up as a way to do 32 nm node (since there is nothing else ready). So the article needs a major update. Initially, there were all these directions from different contributors, but it's finally panning out.[[User:Guiding light|Guiding light]] 09:46, 20 January 2007 (UTC)

== Pure Water's Index of Refraction ==

Immersion Lithography: "For example, '''for water''' at 193 nm wavelength, '''the index is 1.44.'''"

Numerical Aperture: "where n is the index of refraction of the medium in which the lens is working (1.0 for air, '''1.33 for pure water''', and up to 1.56 for oils)"

Am I just misunderstanding the circumstances of the two examples, or is one incorrect? I admit, this is silly with respect to the article as a whole, but it bothered me enough to mention it. [[Special:Contributions/75.47.122.141|75.47.122.141]] ([[User talk:75.47.122.141|talk]]) 08:15, 1 January 2008 (UTC)

Good catch! The 1.33 is most likely for water at a longer wavelength than 193 nm. Unfortunately it is not specified. As soon as it can be cited, the wavelength should be mentioned.[[Special:Contributions/218.168.208.160|218.168.208.160]] ([[User talk:218.168.208.160|talk]]) 11:29, 3 March 2008 (UTC)

== Mistake on depth of focus ==

The second paragraph under "benefits" says: "However, the depth of focus, or tolerance in wafer topography flatness, is reduced compared to the corresponding "dry" tool at the same resolution." But the following paragraph contradicts that previous assertion: "The successful emergence of immersion lithography comes not just from its ability to extend resolution and depth of focus, . . ." The reference article in this case seems to be [https://de.wikipedia.org/wiki/Immersionslithografie the German one], and according to a Google translation it agrees with the second assertion--i.e. that immersion improves or increases depth of focus, not the other way around.

Which side of this contradiction is right? I think (also from photography) that depth of focus is reduced when aperture is increased (i.e. when the f-number is decreased--see [https://en.wikipedia.org/wiki/Depth_of_field#Effect_of_lens_aperture Depth of field - Effect of lens aperture])?

[[User:XavierAP|XavierAP]] ([[User talk:XavierAP|talk]]) 23:25, 2 November 2012 (UTC)

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== First use of immersion lithography ==

The article originally stated that TSMC used 193i @ 90nm. They only ran test wafers. If you look at https://www.design-reuse.com/news/12662/tsmc-immersion-lithography-nearly-ready.html TSMC only used immersion at 40nm. I believe that IBM was actually the first to use immersion, but cannot find exact dates and references. <!-- Template:Unsigned --><span class="autosigned" style="font-size:85%;">—&nbsp;Preceding [[Wikipedia:Signatures|unsigned]] comment added by [[User:TheKanter|TheKanter]] ([[User talk:TheKanter#top|talk]] • [[Special:Contributions/TheKanter|contribs]]) 16:35, 26 October 2021 (UTC)</span> <!--Autosigned by SineBot-->

Latest revision as of 14:10, 3 February 2024

I think lithography costs are an appropriate concern. I cannot see a reason they will come down. Guiding light 05:28, 12 January 2006 (UTC)[reply]

No. 8 at Google (search under Immersion lithography)...not bad!Guiding light 15:54, 6 May 2006 (UTC)[reply]

References

[edit]

I'm not sure why the references aren't clickable, does anyone know how to link them up with the text at the bottom? Paul1337 00:54, 9 July 2006 (UTC)[reply]

Those were hard printed cites. I've replaced them with ref tags, but they still need to go into the proper citation templates. -- Ricky81682 (talk) 05:49, 9 July 2006 (UTC)[reply]

Accessibility

[edit]

Saw the note on the article being "too technical". Began work on trying to generalize the content a bit. Guiding light 07:42, 13 July 2006 (UTC)[reply]

I have finished a first round of revision. I hope the content is satisfactory. If anyone wants their content reinstated, please place notice here.Guiding light 09:04, 13 July 2006 (UTC)[reply]

I removed the technical and citation headers since I actually found them distracting. 220.136.224.42 14:15, 13 July 2006 (UTC)[reply]

Explanations in article

[edit]

The immersion lithography article is very technical, but based on other sources, it seems unavoidable to use technical terms such as refractive index, numerical aperture (N.A.), photoresist, etc. To keep it simple, I reduced some sections. Further work may still be needed regarding various immersion-specific issues (defects, polarization, high-index, photomask).61.61.254.9 00:30, 11 January 2007 (UTC)[reply]

Immersion lithography as of 2007 is in a pretty mature state. It is definitely going to use water as the medium and defect issues are being controlled to the point that immersion tools are big business for ASML and Nikon. While not directly related, double patterning has come up as a way to do 32 nm node (since there is nothing else ready). So the article needs a major update. Initially, there were all these directions from different contributors, but it's finally panning out.Guiding light 09:46, 20 January 2007 (UTC)[reply]

Pure Water's Index of Refraction

[edit]

Immersion Lithography: "For example, for water at 193 nm wavelength, the index is 1.44."

Numerical Aperture: "where n is the index of refraction of the medium in which the lens is working (1.0 for air, 1.33 for pure water, and up to 1.56 for oils)"

Am I just misunderstanding the circumstances of the two examples, or is one incorrect? I admit, this is silly with respect to the article as a whole, but it bothered me enough to mention it. 75.47.122.141 (talk) 08:15, 1 January 2008 (UTC)[reply]

Good catch! The 1.33 is most likely for water at a longer wavelength than 193 nm. Unfortunately it is not specified. As soon as it can be cited, the wavelength should be mentioned.218.168.208.160 (talk) 11:29, 3 March 2008 (UTC)[reply]

Mistake on depth of focus

[edit]

The second paragraph under "benefits" says: "However, the depth of focus, or tolerance in wafer topography flatness, is reduced compared to the corresponding "dry" tool at the same resolution." But the following paragraph contradicts that previous assertion: "The successful emergence of immersion lithography comes not just from its ability to extend resolution and depth of focus, . . ." The reference article in this case seems to be the German one, and according to a Google translation it agrees with the second assertion--i.e. that immersion improves or increases depth of focus, not the other way around.

Which side of this contradiction is right? I think (also from photography) that depth of focus is reduced when aperture is increased (i.e. when the f-number is decreased--see Depth of field - Effect of lens aperture)?

XavierAP (talk) 23:25, 2 November 2012 (UTC)[reply]

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First use of immersion lithography

[edit]

The article originally stated that TSMC used 193i @ 90nm. They only ran test wafers. If you look at https://www.design-reuse.com/news/12662/tsmc-immersion-lithography-nearly-ready.html TSMC only used immersion at 40nm. I believe that IBM was actually the first to use immersion, but cannot find exact dates and references. — Preceding unsigned comment added by TheKanter (talkcontribs) 16:35, 26 October 2021 (UTC)[reply]