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{{WP1.0|class=C|importance=mid|category=category}}
{{OnThisDay|date1=2004-07-05|oldid1=4820999|date2=2004-12-23|oldid2=16335529|date3=2005-07-05|oldid3=18192801|date4=2005-12-23|oldid4=32461857|date5=2006-12-23|oldid5=96087572|date6=2007-12-23|oldid6=179410971|date7=2008-12-23|oldid7=259807918}}
{{OnThisDay|date1=2004-07-05|oldid1=4820999|date2=2004-12-23|oldid2=16335529|date3=2005-07-05|oldid3=18192801|date4=2005-12-23|oldid4=32461857|date5=2006-12-23|oldid5=96087572|date6=2007-12-23|oldid6=179410971|date7=2008-12-23|oldid7=259807918}}
{{WikiProject banner shell|class=C|vital=yes|1=
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{{WikiProject Electronics|importance=Top}}
{{WikiProject Physics|importance=high}}
}}
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== "grounded emitter, ..." ==

I saw the term grounded emitter used a few times. In literature I've read, the term is common emitter, common base, common collector and likewise with source, gate & drain for FETs. The term grounded is not used in some countries; it is called earthed - ground is called earth. I suggest that the term grounded should be changed to common, which is based, I believe, on network theory.
Thank you. acmefixer@yahoo.com 2022-08-09. [[Special:Contributions/2600:1700:CD40:C510:C569:E860:4740:249A|2600:1700:CD40:C510:C569:E860:4740:249A]] ([[User talk:2600:1700:CD40:C510:C569:E860:4740:249A|talk]]) 09:34, 9 August 2022 (UTC)

:A grounded emitter circuit is a common emitter circuit, but not all common emitter circuits are grounded emitter circuits. The terms are used correctly in the article. [[User:Constant314|Constant<b style="color: #4400bb;">''314''</b>]] ([[User talk:Constant314|talk]]) 11:55, 9 August 2022 (UTC)

== Patent numbers? ==

In the article, it says:


<code>The first bipolar junction transistors were invented by Bell Labs' William Shockley, who applied for patent (2,569,347) on June 26, 1948.</code>
== Transistor aging compared to a vacuum tube ==


However, there seems to be an earlier patent ([https://patentimages.storage.googleapis.com/f8/53/1c/dc0c7b5252a663/US2524033.pdf US2524033]) that describes what appears to be a similar invention, with the patent going to John Bardeen. It was applied for four months before [https://patentimages.storage.googleapis.com/4c/d7/98/e30fdc30f7dc7d/US2569347.pdf US2569347] and was also granted first (October 3, 1950 versus September 25, 1951). So is this article pointing to the correct patent and order of events? I am fairly experienced with electronics and semiconductors, but patent language and diagrams are so difficult to read that I'm having a hard time figuring out exactly what was claimed in each, and why John Bardeen applied for a patent 4 months before Shockley did for what appears to be a very similar device and design. For example, Figure 7 in Bardeen's patent appears to show a PNP stack, and he mentions that his device shows current gain, which is exactly what a transistor does.
Is it really appropriate to include aging as a limitation in a section ''comparing them to tubes?'' In isolation it would be a valid concern but compared against a tube with almost infintiely worse long term reliability it becomes an advantage rather than a limitation. I was tempted to simply snip that on sight but I figure I'll raise it here first, I know people can be hesitant to remove sourced material even if as here the source does not directly support the assertion made - the source does not even mention tubes. [[User:3142|3142]] ([[User talk:3142|talk]]) 13:55, 7 January 2019 (UTC)


Would appreciate some feedback or input from someone more experienced than I with reading patents and semiconductor physics (which I have only a passing understanding of). <span style="text-shadow:2px 2px 4px red;">[[User:MrAureliusR|<span style="color:red"> '''<big>M</big>r<big>A</big>urelius<big>R</big>'''</span>]]</span><span style="text-shadow:3px 3px 4px blue;"><small>[[User_talk:MrAureliusR|<sub>Talk!</sub>]]</small></span> 01:10, 21 December 2023 (UTC)
:I used to work for a semiconductor manufacturer. One of my duties was to waive failures in the accelerated aging tests, provided a reason for the premature failure could be found that would not occur in real products. I agree the bullet about aging of transistors should be removed. [[User:Jc3s5h|Jc3s5h]] ([[User talk:Jc3s5h|talk]]) 15:28, 7 January 2019 (UTC)


:Both were filed by "Bell Telephone Laboratories Inc"
== Wrong link ==


:* https://en.wikipedia.org/wiki/History_of_the_transistor
2N3904 transistor has incorrect datasheet link <!-- Template:Unsigned IP --><small class="autosigned">—&nbsp;Preceding [[Wikipedia:Signatures|unsigned]] comment added by [[Special:Contributions/195.222.90.140|195.222.90.140]] ([[User talk:195.222.90.140#top|talk]]) 12:28, 9 October 2019 (UTC)</small> <!--Autosigned by SineBot-->
:Fixed. [[User:Jc3s5h|Jc3s5h]] ([[User talk:Jc3s5h|talk]]) 13:55, 9 October 2019 (UTC)


:* https://en.wikipedia.org/wiki/John_Bardeen#Invention_of_the_transistor
:* https://patents.google.com/patent/US2524033A/en?oq=US2524033
:* https://patentimages.storage.googleapis.com/f8/53/1c/dc0c7b5252a663/US2524033.pdf


:* https://en.wikipedia.org/wiki/William_Shockley#Development_of_the_transistor
==Germans made the first working Transistor ==
:* https://patents.google.com/patent/US2569347A/en?oq=US2569347
The world's first working device was built in Paris by German scientists [[Herbert Mataré]] and [[Heinrich Welker]] , who preceded the Bell Labs, Moreover their prototype was more advanced than the prototype of Bell Labs. See: https://spectrum.ieee.org/tech-history/silicon-revolution/how-europe-missed-the-transistor
:* https://patentimages.storage.googleapis.com/4c/d7/98/e30fdc30f7dc7d/US2569347.pdf
Just because the War Crimes of Germans , it was impossible to receive Global attention for Germans after the war.--[[User:Regtraht|Regtraht]] ([[User talk:Regtraht|talk]]) 18:01, 16 November 2019 (UTC)


:• [[User:Sbmeirow|<span style="color:#8D38C9;">Sbmeirow</span>]] • [[User talk:Sbmeirow|<span style="color:#8D38C9;White;">Talk</span>]] • 03:20, 21 December 2023 (UTC)


== Was William Shockley actually one of the threesome who invented the point contact transistor? ==
"he French device “turns out...to be superior to its American counterpart,” read a more measured but still favorable account in Toute la Radio, a technical journal [see drawing and photo]. “The latter has a limited lifetime and appears to be fairly unstable, whereas the existing transistrons do not show any sign of fatigue.”


In the article, it says, "The first working device was a [[point-contact transistor]] invented in 1947 by physicists [[John Bardeen]], [[Walter Brattain]], and [[William Shockley]]". However, I found a different article on the website Electronic Design, authored by Lou Frenzel, that gives contradictory information. Link: https://www.electronicdesign.com/technologies/analog/article/21808701/who-really-did-invent-the-transistor In the article, it says that William Shockley was '''not''' included in the first point contact transistor patent. Not sure what the correct action would be, though. [[User:Attihoch|Attihoch]] ([[User talk:Attihoch|talk]]) 17:18, 7 November 2024 (UTC)
According to Mataré, this superiority could be attributed to the care they employed in fabricating their devices. While observing the process with microscopes, the women working on the small assembly line would measure current-voltage curves for both metal points with oscilloscopes and fix the points rigidly on the germanium with drops of epoxy after the curves matched the desired characteristics. When Brattain and Shockley visited the Paris group in 1950, Mataré showed them telephone amplifiers made with his transistrons—which allowed him to place a call all the way to Algiers. “That’s quite something,” admitted Shockley a bit guardedly, Mataré recalls half a century later." <!-- Template:Unsigned --><small class="autosigned">—&nbsp;Preceding [[Wikipedia:Signatures|unsigned]] comment added by [[User:Regtraht|Regtraht]] ([[User talk:Regtraht#top|talk]] • [[Special:Contributions/Regtraht|contribs]]) 19:28, 16 November 2019 (UTC)</small> <!--Autosigned by SineBot-->


== Collector should be at top of PNP symbol ==
:The Spectrum article states, "Mataré reckons he first recognized this effect in early 1948 ('''perhaps a month or two after Bardeen and Brattain’s breakthrough at Bell Labs''')." (empahsis added) Near simultaneous invention is not uncommon but this seems to clearly establish that the Paris invention was second. [[User:Tom94022|Tom94022]] ([[User talk:Tom94022|talk]]) 19:50, 16 November 2019 (UTC)


The PNP symbol under "Electronic symbol" should be flipped vertically, to put the collector at the top. That's the way it's usually shown in schematics. [[User:BMJ-pdx|BMJ-pdx]] ([[User talk:BMJ-pdx|talk]]) 13:23, 28 November 2024 (UTC)
== Transistors ==


:I see it both ways. [[User:Constant314|<b style="color: #4400bb;">''Constant314''</b>]] ([[User talk:Constant314|talk]]) 19:23, 28 November 2024 (UTC)
[https://electricengineer13.com/introduction-to-transistors/ '''Transistors''']
Introduction Transistors ’round up’ our electronics world. They are crucial as a control source in almost every modern circuit. Sometimes you see them, but more often than not – they are … [https://electricengineer13.com/introduction-to-transistors/ '''READ MORE''']

Latest revision as of 19:23, 28 November 2024


"grounded emitter, ..."

[edit]

I saw the term grounded emitter used a few times. In literature I've read, the term is common emitter, common base, common collector and likewise with source, gate & drain for FETs. The term grounded is not used in some countries; it is called earthed - ground is called earth. I suggest that the term grounded should be changed to common, which is based, I believe, on network theory. Thank you. acmefixer@yahoo.com 2022-08-09. 2600:1700:CD40:C510:C569:E860:4740:249A (talk) 09:34, 9 August 2022 (UTC)[reply]

A grounded emitter circuit is a common emitter circuit, but not all common emitter circuits are grounded emitter circuits. The terms are used correctly in the article. Constant314 (talk) 11:55, 9 August 2022 (UTC)[reply]

Patent numbers?

[edit]

In the article, it says:

The first bipolar junction transistors were invented by Bell Labs' William Shockley, who applied for patent (2,569,347) on June 26, 1948.

However, there seems to be an earlier patent (US2524033) that describes what appears to be a similar invention, with the patent going to John Bardeen. It was applied for four months before US2569347 and was also granted first (October 3, 1950 versus September 25, 1951). So is this article pointing to the correct patent and order of events? I am fairly experienced with electronics and semiconductors, but patent language and diagrams are so difficult to read that I'm having a hard time figuring out exactly what was claimed in each, and why John Bardeen applied for a patent 4 months before Shockley did for what appears to be a very similar device and design. For example, Figure 7 in Bardeen's patent appears to show a PNP stack, and he mentions that his device shows current gain, which is exactly what a transistor does.

Would appreciate some feedback or input from someone more experienced than I with reading patents and semiconductor physics (which I have only a passing understanding of). MrAureliusRTalk! 01:10, 21 December 2023 (UTC)[reply]

Both were filed by "Bell Telephone Laboratories Inc"
SbmeirowTalk03:20, 21 December 2023 (UTC)[reply]

Was William Shockley actually one of the threesome who invented the point contact transistor?

[edit]

In the article, it says, "The first working device was a point-contact transistor invented in 1947 by physicists John Bardeen, Walter Brattain, and William Shockley". However, I found a different article on the website Electronic Design, authored by Lou Frenzel, that gives contradictory information. Link: https://www.electronicdesign.com/technologies/analog/article/21808701/who-really-did-invent-the-transistor In the article, it says that William Shockley was not included in the first point contact transistor patent. Not sure what the correct action would be, though. Attihoch (talk) 17:18, 7 November 2024 (UTC)[reply]

Collector should be at top of PNP symbol

[edit]

The PNP symbol under "Electronic symbol" should be flipped vertically, to put the collector at the top. That's the way it's usually shown in schematics. BMJ-pdx (talk) 13:23, 28 November 2024 (UTC)[reply]

I see it both ways. Constant314 (talk) 19:23, 28 November 2024 (UTC)[reply]