Sorab K. Ghandhi
Sorab K Ghandi | |
|---|---|
| File:Sorab Ghandhi.jpg | |
| Born | Allahabad, India |
| Nationality | American |
| Alma mater | University of Illinois |
| Occupation | Professor Emeritus at Rensselaer Polytechnic Institute |
Sorab(Soli) K. Ghandhi - Professor Emeritus at Rensselaer Polytechnic Institute (RPI), is known for his pioneering work in electrical engineering education, and in the advancement of Organometallic Vapor Phase Epitaxy (OMVPE) for compound semiconductors.
Education
Ghandhi did his schooling from St. Joseph's College ,Nainital and received his B.Sc. in electrical and mechanical engineering from Benares Hindu University in 1947, and his MS and Ph.D. in electronics from the University of Illinois in 1948 and 1951 respectively.
Career
While a member of the Advanced Circuits Group, General Electric Company, from 1951-1960, he co-authored first books in the world on transistor circuits [1] and transistor circuit engineering [2] He joined Rensselaer Polytechnic Institute in 1963 as a Professor of Electrophysics, and was Chairman from 1967-1974. He retired from RPI in 1992.
At RPI, he introduced microelectronics into the graduate studies curriculum and wrote a book on this subject [3]. Subsequently, this was followed by a book on semiconductor power devices [4]. Following the work of Manasevit in 1968 [5]. He started the first university program on the OMVPE of compound semiconductors in 1970, and conducted research with his students in this area until retirement. This work included the growth and characterization of GaAs [6], InAs, GaInAs, InP, CdTe, HgCdTe and ZnSe materials and devices, which resulted in over 180 papers. Many of these were "firsts" in the field: the growth of GaInAs over the full range of compositions [7], the use of homostructures for evaluating recombination in surface-free GaAs [8], the use of halogen etching in GaAs [9], the OMVPE growth of large area films of HgCdTe with uniform composition [10] and the p-type doping of this HgCdTe [11]. He also wrote two books on VLSI fabrication principles which included silicon and GaAs materials technology [12] [13].
Membership
Member, Administrative Committee, IEE Transactions on Circuit Theory from 1963-1966
Guest Editor, Special Issue of the IEEE on Materials and Processes in Microelectronics (1966-1967)
Associate Editor, Solid-State Electronics from 1974-1988, Secretary, International Solid State Circuits Conference (1959)
Program Chairman, International Solid State Circuits Conference (1960)
Chairman, Workshop on HgCdTe and other Low Gap Materials (1992)
Member, Editorial Board, IEEE Press from 1983-1987.
Awards
Scholar, J.N. Tata Foundation 1947-1951
Fellow, IEEE 1965 Rensselaer Distinguished Teaching Award 1975
Rensselaer Distinguished Professor Award 1987
Education Award, Electron Device Society, IEEE 2010
References
- ^ Principles of Transistor Circuits, (Ed.R.F. Shea). John Wiley and Sons. 1953.
- ^ Transistor Circuit Engineering, (Ed.R.F. Shea). John Wiley and Sons. 1957.
- ^ Theory and Practice of Microelectronics, John Wiley and Sons. 1968
- ^ Semiconductor Power Devices, John Wiley and Sons. 1977.
- ^ H.M. Manasevit and W.J. Simpson, "The use of Metal-Organics in the Preparation of Semiconductor Materials: I. Epitaxial Gallium-V Compounds", J. Electrochem. Soc. 116, 1725. (1969).
- ^ D.H. Reep and S.K. Ghandhi, "Deposition of GaAs Epitaxial Layers by Organometallic CVD. J. Electrochem. Soc. 130, 675 (1983).
- ^ . B. Jayant Baliga and Sorab K. Ghandhi, "Growth and Properties of heteroepitaxial GaInAs Alloys on GaAs Substrates using Trimethylgallium, Triethylindium, and Arsine", J. Electrochem. Soc. 122, 1725 (1975).
- ^ L.M. Smith, D.J. Wolford, R. Venkatasubramanian and S.K. Ghandhi, "Radiative Recombination in Surface-Free n+n-n+ Homostructures", Appl. Phys. Lett. 57 1572 (1990)
- ^ R. Bhat and S.K. Ghandhi, "The Effect of Chloride Etching on GaAs Epitaxy using TMG and Arsine", J. Electrochem Soc. 125, 771, (1978).
- ^ Sorab K. Ghandhi, Ishwara B. Bhat and Hamid Fardi, "Organometallic Epitaxy of HgCdTe on CdTeSe substrates with high compositional uniformity", Appl. Phys. Lett. 52 (5), 392 (1988).
- ^ S.K. Ghandhi, N.R. Taskar, K.K. Parat, D. Terry and I.B. Bhat, "Extrinsic p-type doping of HgCdTe grown by Organometallic Epitaxy", Appl. Phys. Lett. 53 (17), 392 (1988).
- ^ VLSI Fabrication Principles: Silicon and Gallium Arsenide, John Wiley and Sons. 1983.
- ^ Completely Revised Edition, VLSI Fabrication Principles: Silicon and Gallium Arsenide, John Wiley and Sons. 1994.