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Indium gallium arsenide phosphide

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Indium Gallium Arsenide Phosphide (Template:GalliumxTemplate:Indium1-xTemplate:ArsenicyTemplate:Phosphorus1-y), is a quaternary compound semiconductor material, an alloy of gallium arsenide and indium phosphide. This compound has applications in photonic devices, due to the ability to tailor it's band gap via changes in the alloy mole ratios, x & y.

Indium Phosphide based photonic integrated circuits, or PICs, commonly use alloys of Template:GalliumxTemplate:Indium1-xTemplate:ArsenicyTemplate:Phosphorus1-y to construct quantum wells, waveguides and other photonic structures, lattice matched to an InP substrate, enabling single-crystal epitaxial growth onto InP.

Many devices operating in the near-infrared 1.55μm wavelength window utilize this alloy, and are employed as optical components (such as laser transmitters, photodetectors and modulators) in C-band communications systems.

See also

References

http://www.ioffe.ru/SVA/NSM/Semicond/GaInAsP/

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