Talk:Transistor

Transistor aging compared to a vacuum tube

Is it really appropriate to include aging as a limitation in a section comparing them to tubes? In isolation it would be a valid concern but compared against a tube with almost infintiely worse long term reliability it becomes an advantage rather than a limitation. I was tempted to simply snip that on sight but I figure I'll raise it here first, I know people can be hesitant to remove sourced material even if as here the source does not directly support the assertion made - the source does not even mention tubes. 3142 (talk) 13:55, 7 January 2019 (UTC)

I used to work for a semiconductor manufacturer. One of my duties was to waive failures in the accelerated aging tests, provided a reason for the premature failure could be found that would not occur in real products. I agree the bullet about aging of transistors should be removed. Jc3s5h (talk) 15:28, 7 January 2019 (UTC)

Wrong link

2N3904 transistor has incorrect datasheet link — Preceding unsigned comment added by 195.222.90.140 (talk) 12:28, 9 October 2019 (UTC)

Fixed. Jc3s5h (talk) 13:55, 9 October 2019 (UTC)

Germans made the first working Transistor

The world's first working device was built in Paris by German scientists Herbert Mataré and Heinrich Welker , who preceded the Bell Labs, Moreover their prototype was more advanced than the prototype of Bell Labs. See: https://spectrum.ieee.org/tech-history/silicon-revolution/how-europe-missed-the-transistor Just because the War Crimes of Germans , it was impossible to receive Global attention for Germans after the war.--Regtraht (talk) 18:01, 16 November 2019 (UTC)

"he French device “turns out...to be superior to its American counterpart,” read a more measured but still favorable account in Toute la Radio, a technical journal [see drawing and photo]. “The latter has a limited lifetime and appears to be fairly unstable, whereas the existing transistrons do not show any sign of fatigue.”

According to Mataré, this superiority could be attributed to the care they employed in fabricating their devices. While observing the process with microscopes, the women working on the small assembly line would measure current-voltage curves for both metal points with oscilloscopes and fix the points rigidly on the germanium with drops of epoxy after the curves matched the desired characteristics. When Brattain and Shockley visited the Paris group in 1950, Mataré showed them telephone amplifiers made with his transistrons—which allowed him to place a call all the way to Algiers. “That’s quite something,” admitted Shockley a bit guardedly, Mataré recalls half a century later." — Preceding unsigned comment added by Regtraht (talk • contribs) 19:28, 16 November 2019 (UTC)

The Spectrum article states, "Mataré reckons he first recognized this effect in early 1948 (perhaps a month or two after Bardeen and Brattain’s breakthrough at Bell Labs)." (empahsis added) Near simultaneous invention is not uncommon but this seems to clearly establish that the Paris invention was second. Tom94022 (talk) 19:50, 16 November 2019 (UTC)

Your reference article also says the following ...

"On a hunch, he asked Welker to fashion larger germanium samples, from which they could cut slivers of higher purity. Using this higher-grade material, Mataré finally got consistent amplification in June 1948, six months after Bardeen and Brattain. Encouraged by this success, they phoned PTT Secretary Eugène Thomas and invited him over for a demonstration. But Thomas was apparently too busy—or perhaps not interested enough—to come by."

Finally, Matare was able to finally get transistor amplification to work on his "Transitron" device (June 1948) and he had applied for a patent on August 13th 1948, well after Bell Labs transistor's discovery and announcement. Historianbuff (talk) 22:40, 19 November 2019 (UTC)